Enhanced Charge Carrier Mobility in 2-D Material for Electronics

This paper is about a new two-dimensional nanomaterial that could revolutionize electronics developed at CSIRO and RMIT University. This material is made of layers of molybdenum oxide and has unique properties which encourage free flow of electrons at ultra-high speeds. The researches adapted graphene to create a new conductive nanomaterial. 

Even though graphene supports high-speed electrons, its physical properties prevent it from being used for high-speed electronics, so this new material was also made up of layered sheets but within these layers, electrons are able to zip through at high speeds with minimal scattering.

Profesor Kourosh Kalantarzadeh from RMIT said the researchers were able to remove the "road blocks" that could obstruct the electrons and he also mentioned that instead of scattering when they hit road blocks, as they would in conventional materials, they can simply pass through this new material and get through the structure faster.

Scientists used a process known as "exfoliation" to create layers 11 nm thick and manipulated the material to convert it into a semiconductor, then nanoscale transistors were created using molybdenum oxide. The mobility values achieved were more than 1000 cm2/Vs, which exceedes the current industry standard for low dimensional silicon.

Reference:

Balendhran S., Deng J., Zhen Ou J et al. Enhanced Charge Carrier Mobility in Two-Dimensional High Dielectric Molybdenum Oxide. Advanced Materials, 2013. DOI: 10.1002/adma.201203346