Atomic-Scale Evidence for Potential Barriers and Strong Carrier Scattering at Graphene Grain Boundaries: Scanning Tunneling Microscopy Study

An important factor in the potential use of graphene in nanoelectronic circuitry is scattering at grain boundaries; such scattering greatly limits the electronic performance of CVD-grown graphene compared to defect-free graphene.  The figure shows an atomic resolution STM image of a grain boundary on CVD grown graphene that has been transferred from its copper growth surface to an oxidized silicon wafer.  This paper studies the atomic level detail of electron scattering at grain boundaries in graphene.

Doc.: http://pubs.acs.org/doi/abs/10.1021/nn302064p.

Koepke, J., D. Wood, J., Estrada, D., Yong Ong, T. He, D., Pop, E., & W. Lyding, j. (2013). Atomic-Scale Evidence for Potential Barriers and Strong Carrier Scattering at Graphene Grain Boundaries: A Scanning Tunneling Microscopy Study. ACS Nano, 75-86