InxGa1–xAs Nanowire Growth on Graphene: van der Waals Epitaxy Induced Phase Segregation

This paper leverages the nascent 2D materials growth effort in CNEM to utilize graphene and MoS₂ as substrates for for In_xGa_1-xAs nanowire growth.  On graphene, there is a phase separation wherein the nanowires grow with an InAs core and an InGaAs shell. On MoS₂, only homogeneous InGaAs nanowires grow, similarly to VLS growth. The phase segregation of nanowires on graphene is a form of van der Waals epitaxy in which the InAs nanowire core is lattice matched with the graphene growth template.

Doc.: http://pubs.acs.org/doi/abs/10.1021/nl304569d

k. Mohnseny, P., Behnam, A., D. Wood, J., D. English , C., W. Lyding, J., Pop, E., & Li, X. (2013). InxGa1–xAs Nanowire Growth on Graphene: van der Waals Epitaxy Induced Phase Segregation. Nano Letters, 1553-1161 http://pubs.acs.org/doi/abs/10.1021/nl304569d